Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium

Nuriddin Azadovich Matchanov; Komiljon Abdusharipovich Bobojonov; Dilmurad Shamuradovich Saidov; Shokhzod Komiljonovich Abdusharipov; Alisher Erkaboevich Rajabov

doi:doi:10.11648/j.ajpa.20221002.14

Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium

Nuriddin Azadovich Matchanov, Komiljon Abdusharipovich Bobojonov, Dilmurad Shamuradovich Saidov, Shokhzod Komiljonovich Abdusharipov, Alisher Erkaboevich Rajabov

Published in American Journal of Physics and Applications (Volume 10, Issue 2)

Received: 15 January 2022 Accepted: 4 February 2022 Published: 9 April 2022

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Abstract

The effect of thermal annealing in vacuum (in the temperature range of 200-900°C) on the electrical conductivity of the structure of a nickel film - a single-crystal layer of germanosilicide has been studied. Nickel films 15 nm thick were sputtered by adsorption sputtering in vacuum. The possibility of forming conductive layers with a surface resistance of about 4.9 mOhm * cm and on their basis bulk Si_1-xGe_x single crystals with a thickness of 4 μm by mechanical processing and chemical etching, as well as deposition in a vacuum environment of 10^-5 -10^-7 Torr. The surface resistance of the film and the surface morphology (and chipping) were studied, the phase state of nickel germanium silicide films was studied by X-ray diffraction, the study of thermoelectric properties and the comparison of Ni-SiRH and Ni-Si_1-x-Ge_x samples as thermoelectric materials. The thermopower values were obtained experimentally in the temperature range 36-107°C, and the role of the nanoscale film and substrate in the formation of the thermoelectric effect was discussed. Increasing the thermoelectric figure of merit due to nickel with decreasing surface resistance and due to phonon scattering on surfaces and heterostructures such as nickel germanosilicide, superlattices and layer/substrate systems. The best quality factor ZT = 1.98 ± 0.05 was obtained for Ni-(Si_0.95Ge_0.05) at T = 300K. The maximum difference with a value of ΔT_max = 326.84K.

Published in	American Journal of Physics and Applications (Volume 10, Issue 2)
DOI	10.11648/j.ajpa.20221002.14
Page(s)	45-50
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2022. Published by Science Publishing Group

Keywords

Thermoelectricity, Solid Solution, Alloying, Clusters, Solid-State Reactions, Nickel Silicide, Germane-Nickel Silicide, Nanoclusters, Agglomeration

References

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Nuriddin Azadovich Matchanov, Komiljon Abdusharipovich Bobojonov, Dilmurad Shamuradovich Saidov, Shokhzod Komiljonovich Abdusharipov, Alisher Erkaboevich Rajabov. (2022). Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium. American Journal of Physics and Applications, 10(2), 45-50. https://doi.org/10.11648/j.ajpa.20221002.14

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ACS Style

Nuriddin Azadovich Matchanov; Komiljon Abdusharipovich Bobojonov; Dilmurad Shamuradovich Saidov; Shokhzod Komiljonovich Abdusharipov; Alisher Erkaboevich Rajabov. Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium. Am. J. Phys. Appl. 2022, 10(2), 45-50. doi: 10.11648/j.ajpa.20221002.14

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AMA Style

Nuriddin Azadovich Matchanov, Komiljon Abdusharipovich Bobojonov, Dilmurad Shamuradovich Saidov, Shokhzod Komiljonovich Abdusharipov, Alisher Erkaboevich Rajabov. Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium. Am J Phys Appl. 2022;10(2):45-50. doi: 10.11648/j.ajpa.20221002.14

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@article{10.11648/j.ajpa.20221002.14,
  author = {Nuriddin Azadovich Matchanov and Komiljon Abdusharipovich Bobojonov and Dilmurad Shamuradovich Saidov and Shokhzod Komiljonovich Abdusharipov and Alisher Erkaboevich Rajabov},
  title = {Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium},
  journal = {American Journal of Physics and Applications},
  volume = {10},
  number = {2},
  pages = {45-50},
  doi = {10.11648/j.ajpa.20221002.14},
  url = {https://doi.org/10.11648/j.ajpa.20221002.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20221002.14},
  abstract = {The effect of thermal annealing in vacuum (in the temperature range of 200-900°C) on the electrical conductivity of the structure of a nickel film - a single-crystal layer of germanosilicide has been studied. Nickel films 15 nm thick were sputtered by adsorption sputtering in vacuum. The possibility of forming conductive layers with a surface resistance of about 4.9 mOhm * cm and on their basis bulk Si1-xGex single crystals with a thickness of 4 μm by mechanical processing and chemical etching, as well as deposition in a vacuum environment of 10-5 -10-7 Torr. The surface resistance of the film and the surface morphology (and chipping) were studied, the phase state of nickel germanium silicide films was studied by X-ray diffraction, the study of thermoelectric properties and the comparison of Ni-SiRH and Ni-Si1-x-Gex samples as thermoelectric materials. The thermopower values were obtained experimentally in the temperature range 36-107°C, and the role of the nanoscale film and substrate in the formation of the thermoelectric effect was discussed. Increasing the thermoelectric figure of merit due to nickel with decreasing surface resistance and due to phonon scattering on surfaces and heterostructures such as nickel germanosilicide, superlattices and layer/substrate systems. The best quality factor ZT = 1.98 ± 0.05 was obtained for Ni-(Si0.95Ge0.05) at T = 300K. The maximum difference with a value of ΔTmax = 326.84K.},
 year = {2022}
}

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TY  - JOUR
T1  - Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium
AU  - Nuriddin Azadovich Matchanov
AU  - Komiljon Abdusharipovich Bobojonov
AU  - Dilmurad Shamuradovich Saidov
AU  - Shokhzod Komiljonovich Abdusharipov
AU  - Alisher Erkaboevich Rajabov
Y1  - 2022/04/09
PY  - 2022
N1  - https://doi.org/10.11648/j.ajpa.20221002.14
DO  - 10.11648/j.ajpa.20221002.14
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 45
EP  - 50
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20221002.14
AB  - The effect of thermal annealing in vacuum (in the temperature range of 200-900°C) on the electrical conductivity of the structure of a nickel film - a single-crystal layer of germanosilicide has been studied. Nickel films 15 nm thick were sputtered by adsorption sputtering in vacuum. The possibility of forming conductive layers with a surface resistance of about 4.9 mOhm * cm and on their basis bulk Si1-xGex single crystals with a thickness of 4 μm by mechanical processing and chemical etching, as well as deposition in a vacuum environment of 10-5 -10-7 Torr. The surface resistance of the film and the surface morphology (and chipping) were studied, the phase state of nickel germanium silicide films was studied by X-ray diffraction, the study of thermoelectric properties and the comparison of Ni-SiRH and Ni-Si1-x-Gex samples as thermoelectric materials. The thermopower values were obtained experimentally in the temperature range 36-107°C, and the role of the nanoscale film and substrate in the formation of the thermoelectric effect was discussed. Increasing the thermoelectric figure of merit due to nickel with decreasing surface resistance and due to phonon scattering on surfaces and heterostructures such as nickel germanosilicide, superlattices and layer/substrate systems. The best quality factor ZT = 1.98 ± 0.05 was obtained for Ni-(Si0.95Ge0.05) at T = 300K. The maximum difference with a value of ΔTmax = 326.84K.
VL  - 10
IS  - 2
ER  -

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Author Information

Nuriddin Azadovich Matchanov

International Institute of Solar Energy, 2b House, Tashkent, Uzbekistan
Komiljon Abdusharipovich Bobojonov

Urgench Branch, Tashkent University of Information Technologies Named After Muhammad al-Khwarizmi, Urgench, Uzbekistan
Dilmurad Shamuradovich Saidov

Urgench Branch, Tashkent University of Information Technologies Named After Muhammad al-Khwarizmi, Urgench, Uzbekistan
Shokhzod Komiljonovich Abdusharipov

Urgench Branch, Tashkent University of Information Technologies Named After Muhammad al-Khwarizmi, Urgench, Uzbekistan
Alisher Erkaboevich Rajabov

Urgench Branch, Tashkent University of Information Technologies Named After Muhammad al-Khwarizmi, Urgench, Uzbekistan

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Nuriddin Azadovich Matchanov, Komiljon Abdusharipovich Bobojonov, Dilmurad Shamuradovich Saidov, Shokhzod Komiljonovich Abdusharipov, Alisher Erkaboevich Rajabov. (2022). Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium. American Journal of Physics and Applications, 10(2), 45-50. https://doi.org/10.11648/j.ajpa.20221002.14

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ACS Style

Nuriddin Azadovich Matchanov; Komiljon Abdusharipovich Bobojonov; Dilmurad Shamuradovich Saidov; Shokhzod Komiljonovich Abdusharipov; Alisher Erkaboevich Rajabov. Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium. Am. J. Phys. Appl. 2022, 10(2), 45-50. doi: 10.11648/j.ajpa.20221002.14

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AMA Style

Nuriddin Azadovich Matchanov, Komiljon Abdusharipovich Bobojonov, Dilmurad Shamuradovich Saidov, Shokhzod Komiljonovich Abdusharipov, Alisher Erkaboevich Rajabov. Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium. Am J Phys Appl. 2022;10(2):45-50. doi: 10.11648/j.ajpa.20221002.14

Copy | Download

@article{10.11648/j.ajpa.20221002.14,
  author = {Nuriddin Azadovich Matchanov and Komiljon Abdusharipovich Bobojonov and Dilmurad Shamuradovich Saidov and Shokhzod Komiljonovich Abdusharipov and Alisher Erkaboevich Rajabov},
  title = {Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium},
  journal = {American Journal of Physics and Applications},
  volume = {10},
  number = {2},
  pages = {45-50},
  doi = {10.11648/j.ajpa.20221002.14},
  url = {https://doi.org/10.11648/j.ajpa.20221002.14},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20221002.14},
  abstract = {The effect of thermal annealing in vacuum (in the temperature range of 200-900°C) on the electrical conductivity of the structure of a nickel film - a single-crystal layer of germanosilicide has been studied. Nickel films 15 nm thick were sputtered by adsorption sputtering in vacuum. The possibility of forming conductive layers with a surface resistance of about 4.9 mOhm * cm and on their basis bulk Si1-xGex single crystals with a thickness of 4 μm by mechanical processing and chemical etching, as well as deposition in a vacuum environment of 10-5 -10-7 Torr. The surface resistance of the film and the surface morphology (and chipping) were studied, the phase state of nickel germanium silicide films was studied by X-ray diffraction, the study of thermoelectric properties and the comparison of Ni-SiRH and Ni-Si1-x-Gex samples as thermoelectric materials. The thermopower values were obtained experimentally in the temperature range 36-107°C, and the role of the nanoscale film and substrate in the formation of the thermoelectric effect was discussed. Increasing the thermoelectric figure of merit due to nickel with decreasing surface resistance and due to phonon scattering on surfaces and heterostructures such as nickel germanosilicide, superlattices and layer/substrate systems. The best quality factor ZT = 1.98 ± 0.05 was obtained for Ni-(Si0.95Ge0.05) at T = 300K. The maximum difference with a value of ΔTmax = 326.84K.},
 year = {2022}
}

Copy | Download

TY  - JOUR
T1  - Study of Thermoelectric Properties of Nickel Germano-silicides Obtained on the Basis of Bulk Solid Solutions of Silicon-germanium
AU  - Nuriddin Azadovich Matchanov
AU  - Komiljon Abdusharipovich Bobojonov
AU  - Dilmurad Shamuradovich Saidov
AU  - Shokhzod Komiljonovich Abdusharipov
AU  - Alisher Erkaboevich Rajabov
Y1  - 2022/04/09
PY  - 2022
N1  - https://doi.org/10.11648/j.ajpa.20221002.14
DO  - 10.11648/j.ajpa.20221002.14
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 45
EP  - 50
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20221002.14
AB  - The effect of thermal annealing in vacuum (in the temperature range of 200-900°C) on the electrical conductivity of the structure of a nickel film - a single-crystal layer of germanosilicide has been studied. Nickel films 15 nm thick were sputtered by adsorption sputtering in vacuum. The possibility of forming conductive layers with a surface resistance of about 4.9 mOhm * cm and on their basis bulk Si1-xGex single crystals with a thickness of 4 μm by mechanical processing and chemical etching, as well as deposition in a vacuum environment of 10-5 -10-7 Torr. The surface resistance of the film and the surface morphology (and chipping) were studied, the phase state of nickel germanium silicide films was studied by X-ray diffraction, the study of thermoelectric properties and the comparison of Ni-SiRH and Ni-Si1-x-Gex samples as thermoelectric materials. The thermopower values were obtained experimentally in the temperature range 36-107°C, and the role of the nanoscale film and substrate in the formation of the thermoelectric effect was discussed. Increasing the thermoelectric figure of merit due to nickel with decreasing surface resistance and due to phonon scattering on surfaces and heterostructures such as nickel germanosilicide, superlattices and layer/substrate systems. The best quality factor ZT = 1.98 ± 0.05 was obtained for Ni-(Si0.95Ge0.05) at T = 300K. The maximum difference with a value of ΔTmax = 326.84K.
VL  - 10
IS  - 2
ER  -

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